Kuratidzwa Kwechigadzirwa: Kupisa neLaser kweSemiconductor Wafer Annealing

Kuisa mawafer annealing inzira yakakosha mukugadzira ma semiconductor, inosanganisira kuvhurwa kwedopant, kudzoreredzwa kwelattice, uye kugadzirwa kwe ultra-shallow junction (USJ). Kuisa mawafer annealing ne rapid thermal processing (RTP) zvinotambura nekupisa kwakanyanya, kupararira kwedopant kusina kudzorwa zvakanaka, uye kusaenzana kwakakwana, zvichiita kuti asakwane kune advanced technology nodes pa 7 nm, 5 nm, uye kupfuura—kunyanya kune Gate-All-Around (GAA) architectures uye 3D NAND flash memory. Kuisa mawafer annealing ne laser, ine transient high-energy irradiation, micron-scale spatial precision, uye minimal thermal diffusion, yave iri nzira huru yekuzadzisa zvinodiwa zvekugadzira izvi.

Nheyo Yekutanga Yekudziyisa NeLaser

Musoro wekupisa weWave Optics laser une dhizaini yemaziso yakasarudzika inopa mwenje welaser une simba rakawanda, wakafanana nekupisa kuti ivhenekere pamusoro pewafer nenzira chaiyo. Iyo green laser inopa kusanganiswa kwakanaka kwemvura nezvinhu zvakagadzirwa nesilicon (kusanganisira SiC), zvichiita kuti ishandise kupisa zvakanyanya pasina kukuvadza wafer. Izvi zvinoita kuti ikwanise kudzokororwa kwe ion-implanted damage layer uye ishande zvakanaka. Zvadaro, high thermal conductivity ye substrate inobvumira kutonhora nekukurumidza, izvo zvinoomesa chimiro che lattice uye zvinodzivisa kupararira kwe dopant. Maitiro aya anobudirira kugadzira ultra-shallow junctions dzine efficiency ye activation uye steep (inokurumidza) junction profile.

Kupisa neLaser Annealing Kwakakosha Pakuvandudza Kubudirira Kwekugadzira Wafer

1. Kufanana kweBeam: Kufanana kwesimba renzvimbo yebeam rakatsetseka kunodarika 95% (zvakajairika), zvichibvisa kunyunguduka kwakanyanya kana kusanyunguduka kwacho.
2. Kugadzikana Kwesimba: Kuchinja-chinja kwesimba rinobuda nguva dzose kuri pasi pe2%, zvichiita kuti pave nekugadzikana kwakanaka pakati pewafer newafer uye batch-to-batch.
3. Kunyatsojeka kweMufananidzo Wepamusoro: Zvikamu zveOptical zvine nanometer-scale PV/RMS values ​​pamwe nekukanganiswa kwewavefront kwakanyatsodzorwa, zvichidzivirira kukuvara kwenzvimbo dzinopisa.
4. Kudzika kweKutarisa uye Kuumba Beam: Kudzika kwekutarisa kunogona kugadziriswa pamwe chete nekubatanidza beam integrator homogenization inotsigira kuongorora kwakazara kwemawafers ane dhayamita hombe.
5. Kufananidza Wavelength: Yakagadzirirwa mawaveband anonyudzwa zvakanyanya esilicon uye semiconductors yechizvarwa chechitatu (semuenzaniso, SiC, GaN) kuti iwedzere kushandiswa kwesimba zvakanaka.

Mabhenefiti Matatu Akakosha Pamusoro peKunyungudika Kwemazuva Ano

1. Kuderedza kwakanyanya kwekushandiswa kwedopant -Kushandiswa kwekupisa kunogumira pa nanosecond-to-millisecond range ine near-zero dopant diffusion, kugona kusingawanikwe nefurnace annealing kana RTP.

2. Kupisa kwakaderera uye kukuvara kushoma kwemuchina - Nzvimbo yewafer chete ndiyo inosangana nekupisa kwakanyanya kwechinguvana, zvichikonzera kusachinja kwekupisa kwemuchina kana maumbirwo emuchina uye kusaora kwemukati memuchina.

3. Kunyungudutsa kwenzvimbo chaiyo - Madonhwe emwenje anogadziriswa e micron-scale anotsigira kunyungudutsa kwenzvimbo ye3D uye zvishandiso zvakasiyana-siyana zvakabatanidzwa.

Maitiro Ekushandisa

Mashandisirwo anosanganisira kuvhura/kuburitsa mvura, kugadzirisa nzira, uye kupinza magetsi mu ohmic contact annealing ye advanced logic (GAA/CFET), DRAM/3D NAND, SiC/GaN power devices, SOI, uye micro/nano devices. Kupinza magetsi mu laser kunoita kuti pave nekuvandudzwa kwe goho uye mashandiro emidziyo panguva imwe chete.

Kunyungudutsa kweLaser kunoshandura kugadzirwa kwewafer kubva pakunyungudutsa kwepasi rose (gumbeze) kuenda pakunyungudutsa kwemuno kwakanyatsogadzirwa. Tekinoroji yayo ine simba ye optical inotsigira kuenderera mberi kwekuyera uye kubudirira kwekushanda kwema semiconductor nodes epamusoro.

Pepa reKutsanangurwa kweChigadzirwa